IRF200B211
detaildesc

IRF200B211

Infineon Technologies

Product No:

IRF200B211

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 200V 12A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

Update Time: 2024-07-19 18:11:41

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.007

    $1.007

  • 10

    $0.8968

    $8.968

  • 100

    $0.699105

    $69.9105

  • 500

    $0.577543

    $288.7715

  • 1000

    $0.455952

    $455.952

  • 2000

    $0.425562

    $851.124

  • 5000

    $0.404282

    $2021.41

  • 10000

    $0.389082

    $3890.82

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.9V @ 50µA
Base Product Number IRF200
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 170mOhm @ 7.2A, 10V
Power Dissipation (Max) 80W (Tc)
Supplier Device Package TO-220AB
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)