IRF1018EPBF

Infineon Technologies

Product No:

IRF1018EPBF

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Package:

TO-220AB

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Description:

MOSFET N-CH 60V 79A TO220AB

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Update Time: 2024-07-19 18:11:44

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Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 100µA
Base Product Number	IRF1018
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	8.4mOhm @ 47A, 10V
Power Dissipation (Max)	110W (Tc)
Supplier Device Package	TO-220AB
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	2290 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	79A (Tc)