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IPS60R360PFD7SAKMA1
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IPS60R360PFD7SAKMA1

Infineon Technologies

Product No:

IPS60R360PFD7SAKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 10A TO251-3

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

Update Time: 2024-07-19 18:11:41

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3395

    $1.3395

  • 10

    $1.19795

    $11.9795

  • 100

    $0.93423

    $93.423

  • 500

    $0.771742

    $385.871

  • 1000

    $0.609273

    $609.273

  • 2000

    $0.56866

    $1137.32

  • 5000

    $0.540218

    $2701.09

  • 10000

    $0.519916

    $5199.16

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series CoolMOS™PFD7
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4.5V @ 140µA
Base Product Number IPS60R
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 360mOhm @ 2.9A, 10V
Power Dissipation (Max) 43W (Tc)
Supplier Device Package PG-TO251-3
Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 534 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)