IPP65R190E6XKSA1

Infineon Technologies

Product No:

IPP65R190E6XKSA1

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Package:

PG-TO220-3

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Description:

MOSFET N-CH 650V 20.2A TO220-3

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Update Time: 2024-07-19 18:11:40

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Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.5V @ 730µA
Base Product Number	IPP65R190
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Power Dissipation (Max)	151W (Tc)
Supplier Device Package	PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)