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BSC160N10NS3GATMA1
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BSC160N10NS3GATMA1

Infineon Technologies

Product No:

BSC160N10NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 8.8A/42A TDSON

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

Update Time: 2024-07-19 18:11:51

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.311

    $1.311

  • 10

    $1.06875

    $10.6875

  • 100

    $0.831345

    $83.1345

  • 500

    $0.704691

    $352.3455

  • 1000

    $0.574038

    $574.038

  • 2000

    $0.540388

    $1080.776

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 33µA
Base Product Number BSC160
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 16mOhm @ 33A, 10V
Power Dissipation (Max) 60W (Tc)
Supplier Device Package PG-TDSON-8-1
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 42A (Tc)