IPI023NE7N3G

Infineon Technologies

Product No:

IPI023NE7N3G

Manufacturer:

Package:

PG-TO262-3

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Description:

N-CHANNEL POWER MOSFET

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Update Time: 2024-07-19 18:12:31

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Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 273µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Power Dissipation (Max)	300W (Tc)
Supplier Device Package	PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
Drain to Source Voltage (Vdss)	75 V
Input Capacitance (Ciss) (Max) @ Vds	14400 pF @ 37.5 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)