IPD055N08NF2SATMA1

Infineon Technologies

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IPD055N08NF2SATMA1

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Package:

PG-TO252-3

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Description:

MOSFET

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Update Time: 2024-07-19 18:11:40

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Mfr	Infineon Technologies
Series	StrongIRFET™ 2
Package	Cut Tape (CT)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 55µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	5.5mOhm @ 60A, 10V
Power Dissipation (Max)	3W (Ta), 107W (Tc)
Supplier Device Package	PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 98A (Tc)