Home / Single FETs, MOSFETs / IAUZ18N10S5L420ATMA1
IAUZ18N10S5L420ATMA1
detaildesc

IAUZ18N10S5L420ATMA1

Infineon Technologies

Product No:

IAUZ18N10S5L420ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8-32

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 18A TSDSON-8-32

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Update Time: 2024-07-19 18:11:52

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.1115

    $1.1115

  • 10

    $0.9082

    $9.082

  • 100

    $0.70623

    $70.623

  • 500

    $0.598614

    $299.307

  • 1000

    $0.487644

    $487.644

  • 2000

    $0.459059

    $918.118

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series OptiMOS™-5
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 8µA
Base Product Number IAUZ18
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 42mOhm @ 9A, 10V
Power Dissipation (Max) 30W (Tc)
Supplier Device Package PG-TSDSON-8-32
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)