Home / Single FETs, MOSFETs / BSC110N06NS3GATMA1
BSC110N06NS3GATMA1
detaildesc

BSC110N06NS3GATMA1

Infineon Technologies

Product No:

BSC110N06NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-5

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 50A TDSON-8

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Update Time: 2024-07-19 18:11:51

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.9595

    $0.9595

  • 10

    $0.85975

    $8.5975

  • 100

    $0.670035

    $67.0035

  • 500

    $0.55347

    $276.735

  • 1000

    $0.436952

    $436.952

  • 2000

    $0.407826

    $815.652

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 23µA
Base Product Number BSC110
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Supplier Device Package PG-TDSON-8-5
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)