BSB165N15NZ3G

Infineon Technologies

Product No:

BSB165N15NZ3G

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Package:

MG-WDSON-2-9

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Description:

BSB165N15 - 12V-300V N-CHANNEL P

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Update Time: 2024-07-19 18:12:25

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Mfr	Infineon Technologies
Series	OptiMOS®
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MZ
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 110µA
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	16.5mOhm @ 30A, 10V
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Supplier Device Package	MG-WDSON-2-9
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Drain to Source Voltage (Vdss)	150 V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 45A (Tc)