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IDH04G65C5XKSA2
Infineon Technologies
Product No:
IDH04G65C5XKSA2
Manufacturer:
Package:
PG-TO220-2-1
Manufacturer Standard Lead Time:
39 Weeks
Datasheet:
-
Description:
DIODE SIL CARB 650V 4A TO220-2-1
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.1375
$2.1375
10
$1.7746
$17.746
100
$1.41246
$141.246
500
$1.195138
$597.569
1000
$1.014058
$1014.058
2000
$0.963357
$1926.714
5000
$0.927134
$4635.67
10000
$0.896448
$8964.48
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
Product Details
User Guide
| Mfr | Infineon Technologies |
| Speed | No Recovery Time > 500mA (Io) |
| Series | CoolSiC™+ |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Base Product Number | IDH04G65 |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Supplier Device Package | PG-TO220-2-1 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 70 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 4A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
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