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WNSC2D10650TJ
WeEn Semiconductors
Product No:
WNSC2D10650TJ
Manufacturer:
Package:
5-DFN (8x8)
Manufacturer Standard Lead Time:
8 Weeks
Datasheet:
Description:
DIODE SIL CARBIDE 650V 10A 5DFN
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Update Time: 2024-07-19 18:11:43
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.546
$2.546
10
$2.13465
$21.3465
100
$1.7271
$172.71
500
$1.5352
$767.6
1000
$1.314515
$1314.515
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
Product Details
User Guide
| Mfr | WeEn Semiconductors |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Product Status | Active |
| Base Product Number | WNSC2 |
| Capacitance @ Vr, F | 310pF @ 1V, 1MHz |
| Supplier Device Package | 5-DFN (8x8) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
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