TPC8227-H,LQ

Toshiba Semiconductor and Storage

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TPC8227-H,LQ

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8-SOP

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TPC8227-H,LQ

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Update Time: 2023-12-11 10:24:48

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI-H
Package	Bulk
Technology	MOSFET (Metal Oxide)
FET Feature	-
Power - Max	1.5W (Ta)
Configuration	2 N-Channel (Dual)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 100µA
Base Product Number	TPC8227
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	33mOhm @ 2.6A, 10V
Supplier Device Package	8-SOP
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Drain to Source Voltage (Vdss)	40V
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5.1A