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SISS5710DN-T1-GE3
Vishay Siliconix
Product No:
SISS5710DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Batch:
-
Datasheet:
Description:
N-CHANNEL 150 V (D-S) MOSFET POW
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Update Time: 2024-07-19 18:11:42
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.558
$1.558
10
$1.29485
$12.9485
100
$1.03094
$103.094
500
$0.872328
$436.164
1000
$0.740154
$740.154
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Product Information
Parameter Info
Product Details
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8S |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 31.5mOhm @ 10A, 10V |
| Power Dissipation (Max) | 4.1W (Ta), 54.3W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta), 26.2A (Tc) |
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