SISA10BDN-T1-GE3

Vishay Siliconix

Product No:

SISA10BDN-T1-GE3

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PowerPAK® 1212-8

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Description:

N-CHANNEL 30-V (D-S) MOSFET POWE

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Update Time: 2024-07-19 18:11:39

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Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	+20V, -16V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	3.6mOhm @ 10A, 10V
Power Dissipation (Max)	3.8W (Ta), 63W (Tc)
Supplier Device Package	PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs	36.2 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	26A (Ta), 104A (Tc)