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SIS888DN-T1-GE3
Vishay Siliconix
Product No:
SIS888DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Batch:
-
Datasheet:
Description:
MOSFET N-CH 150V 20.2A PPAK
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Update Time: 2024-07-19 18:11:42
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.4915
$1.4915
10
$1.22455
$12.2455
100
$0.95209
$95.209
500
$0.806987
$403.4935
1000
$0.657381
$657.381
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Product Information
Parameter Info
Product Details
User Guide
| Mfr | Vishay Siliconix |
| Series | ThunderFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8S |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.2V @ 250µA |
| Base Product Number | SIS888 |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 10A, 10V |
| Power Dissipation (Max) | 52W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
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