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SI4900DY-T1-E3
Vishay Siliconix
Product No:
SI4900DY-T1-E3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET 2N-CH 60V 5.3A 8-SOIC
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Update Time: 2024-07-19 18:11:41
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.14
$1.14
10
$1.01935
$10.1935
100
$0.794485
$79.4485
500
$0.656298
$328.149
1000
$0.51813
$518.13
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Product Information
Parameter Info
Product Details
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 3.1W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Base Product Number | SI4900 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
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