SI2304BDS-T1-GE3
detaildesc

SI2304BDS-T1-GE3

Vishay Siliconix

Product No:

SI2304BDS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 30V 2.6A SOT23-3

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

Update Time: 2024-07-19 18:11:38

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.437

    $0.437

  • 10

    $0.35055

    $3.5055

  • 100

    $0.238545

    $23.8545

  • 500

    $0.178923

    $89.4615

  • 1000

    $0.134197

    $134.197

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Product Information

Parameter Info

Product Details

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SI2304
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 70mOhm @ 2.5A, 10V
Power Dissipation (Max) 750mW (Ta)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 5 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)