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TRS8E65H,S1Q
Toshiba Semiconductor and Storage
Product No:
TRS8E65H,S1Q
Manufacturer:
Package:
TO-220-2L
Manufacturer Standard Lead Time:
20 Weeks
Datasheet:
-
Description:
G3 SIC-SBD 650V 8A TO-220-2L
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.622
$2.622
10
$2.17455
$21.7455
100
$1.73071
$173.071
500
$1.464444
$732.222
1000
$1.242552
$1242.552
2000
$1.180422
$2360.844
5000
$1.136048
$5680.24
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Product Information
Parameter Info
Product Details
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
| Supplier Device Package | TO-220-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 8 A |
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