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TRS12E65F,S1Q
Toshiba Semiconductor and Storage
Product No:
TRS12E65F,S1Q
Manufacturer:
Package:
TO-220-2L
Manufacturer Standard Lead Time:
24 Weeks
Datasheet:
-
Description:
DIODE SIL CARB 650V 12A TO220-2L
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.2325
$2.2325
10
$1.8544
$18.544
100
$1.476205
$147.6205
500
$1.249117
$624.5585
1000
$1.059868
$1059.868
2000
$1.006876
$2013.752
5000
$0.969019
$4845.095
10000
$0.936938
$9369.38
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Product Information
Parameter Info
Product Details
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Base Product Number | TRS12E65 |
| Capacitance @ Vr, F | 65pF @ 650V, 1MHz |
| Supplier Device Package | TO-220-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
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